Datasheet > IRFU9010

IRFU9010

更新时间： 2024-09-15 20:34:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	287K
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Transistor

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技术参数
数据手册
替代型号

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IRFU9010 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	5.3 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

IRFU9010 数据手册

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Surface Mountable (Order as IRFR9010,

SiHFR9010)

V_DS(V)

_DS(on)()

Q_g(Max.) (nC)

- 50

• Straight Lead Option (Order as IRFU9010,

V_GS= - 10 V

0.50

SiHFU9010)

9.1

3.0

5.9

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Configuration

Single

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

DPAK

(TO-252)

IPAK

(TO-251)

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

DPAK (TO-252)

SiHFR9010-GE3

IRFR9010PbF

SiHFR9010-E3

DPAK (TO-252)

IPAK (TO-251)

SiHFU9010-GE3

IRFU9010PbF

SiHFU9010-E3

SiHFR9010TR-GE3^a

IRFR9010TRPbF^a

SiHFR9010T-E3^a

SiHFR9010TRL-GE3^a

IRFR9010TRLPbF^a

SiHFR9010TL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 50

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

- 5.3

- 3.3

- 21

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

136

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 5.3

2.5

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 150

300

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 9.7 mH, R_g= 25 , peak I_L= - 5.3 A.

c. I_SD - 5.3 A, dI/dt  - 80 A/μs, V_DD 40 V, T_J 150 °C, suggested R_g= 24 .

d. 0.063" (1.6 mm) from case.

S13-0167-Rev. D, 04-Feb-13

Document Number: 91378

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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IRFU9010 替代型号

型号	品牌	替代类型	描述	数据表
IRFU9010PBF	VISHAY	完全替代	Trans MOSFET P-CH 50V 5.3A 3-Pin(3+Tab) IPAK
IRFU9010	SAMSUNG	功能相似	P-CHANNEL POWER MOSFETS

与IRFU9010相关器件

型号	品牌	获取价格	描述	数据表
IRFU9010PBF	VISHAY	获取价格	Trans MOSFET P-CH 50V 5.3A 3-Pin(3+Tab) IPAK
IRFU9012	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta
IRFU9012	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3, FET General
IRFU9012PBF	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPA
IRFU9014	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRFU9014	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)
IRFU9014	VISHAY	获取价格	Power MOSFET
IRFU9014	KERSEMI	获取价格	Power MOSFET
IRFU9014PBF	KERSEMI	获取价格	Power MOSFET
IRFU9014PBF	VISHAY	获取价格	Power MOSFET

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