Datasheet > IRFU6215PBF

IRFU6215PBF

更新时间： 2024-11-20 12:33:47

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	3843K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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数据手册

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IRFU6215PBF 数据手册

PD-95080A

IRFR6215PbF

IRFU6215PbF

HEXFET^®Power MOSFET

^lP-Channel

^l175°C Operating Temperature

^lSurface Mount (IRFR6215)

^lStraight Lead (IRFU6215)

^lAdvanced Process Technology

^lFast Switching

^lFully Avalanche Rated

^lLead-Free

V_DSS= -150V

_DS(on)= 0.295Ω

I_D= -13A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

D-PAK

TO-252AA

I-PAK

TO-251AA

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-13

-9.0

-44

P_D@T_C= 25°C

Power Dissipation

110

0.71

± 20

310

-6.6

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

°C/W

110

www.kersemi.com

12/14/04

12 3 4 5 6 7...10

中文翻译

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