Datasheet > IRFSL11N50A, SiHFSL11N50A

IRFSL11N50A, SiHFSL11N50A

更新时间： 2024-11-03 14:52:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	366K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFSL11N50A, SiHFSL11N50A 数据手册

浏览型号IRFSL11N50A, SiHFSL11N50A的Datasheet PDF文件第2页

浏览型号IRFSL11N50A, SiHFSL11N50A的Datasheet PDF文件第3页

浏览型号IRFSL11N50A, SiHFSL11N50A的Datasheet PDF文件第4页

浏览型号IRFSL11N50A, SiHFSL11N50A的Datasheet PDF文件第5页

浏览型号IRFSL11N50A, SiHFSL11N50A的Datasheet PDF文件第6页

IRFSL11N50A, SiHFSL11N50A

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

I²PAK

(TO-262)

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

500

DESCRIPTION

_DS(on)()

Q_g(Max.) (nC)

_gs(nC)

V_GS= 10 V

0.55

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

I²PAK (TO-262)

Lead (Pb)-free

IRFSL11N50APbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

7.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.3

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

390

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

190

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.1

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 6.4 mH, R_G= 25 , I_AS= 11 A (see fig. 12)

c. I_SD 11 A, dI/dt  185 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

S21-0932-Rev. C, 13-Sep-2021

Document Number: 91288

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRFSL11N50A, SiHFSL11N50A相关器件

型号	品牌	获取价格	描述	数据表
IRFSL11N50APBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFSL17N20D	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
IRFSL17N20DPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFSL23N15D	INFINEON	获取价格	Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)
IRFSL23N15DPBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFSL23N20D	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)
IRFSL23N20DPBF	INFINEON	获取价格	SMPS MOSFET
IRFSL3004PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFSL3006PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFSL3107	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me

与IRFSL11N50A, SiHFSL11N50A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFSL11N50A, SiHFSL11N50A

IRFSL11N50A, SiHFSL11N50A 数据手册

与IRFSL11N50A, SiHFSL11N50A相关器件

与IRFSL11N50A, SiHFSL11N50A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFSL11N50A, SiHFSL11N50A

IRFSL11N50A, SiHFSL11N50A 数据手册

与IRFSL11N50A, SiHFSL11N50A相关器件

与IRFSL11N50A, SiHFSL11N50A相关文章

您还可以找

您在本页遇到什么问题？