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IRFS9133 PDF预览

IRFS9133

更新时间: 2024-11-21 02:52:55
品牌 Logo 应用领域
无锡固电 - ISC 局域网晶体管
页数 文件大小 规格书
2页 266K
描述
isc P-Channel MOSFET Transistor

IRFS9133 数据手册

 浏览型号IRFS9133的Datasheet PDF文件第2页 
isc P-Channel MOSFET Transistor  
IRFS9132  
FEATURES  
·Drain Current –ID=-6.9A@ TC=25  
·Drain Source Voltage-  
: VDSS=-100V(Min)  
·Static Drain-Source On-Resistance  
: RDS(on) =0.4Ω(Max)  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
DESCRIPTION  
·motor drive, DC-DC converter, power switch  
and solenoid drive.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
PARAMETER  
VALUE  
-100  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage-Continuous  
Drain Current-Continuous  
±20  
-6.9  
V
ID  
A
PD  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
42  
W
150  
TJ  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
/W  
Rth j-c  
Thermal Resistance, Junction to Case  
2.98  
1
isc websitewww.iscsemi.com  
isc & iscsemi is registered trademark  

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