Datasheet > IRFS9133

IRFS9133

更新时间： 2024-11-06 02:52:55

品牌	Logo	应用领域
无锡固电 - ISC		局域网晶体管
页数	文件大小	规格书
2页	266K
描述
isc P-Channel MOSFET Transistor

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中文翻译

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数据手册

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IRFS9133 数据手册

isc P-Channel MOSFET Transistor

IRFS9132

FEATURES

·Drain Current –I_D=-6.9A@ T_C=25℃

·Drain Source Voltage-

: V_DSS=-100V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)=0.4Ω(Max)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·motor drive, DC-DC converter, power switch

and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

PARAMETER

VALUE

-100

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

-6.9

I_D

P_D

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

150

℃

T_J

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

R_{th j-c}

Thermal Resistance, Junction to Case

2.98

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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与IRFS9133相关器件

型号	品牌	获取价格	描述	数据表
IRFS9140	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 13.2A I(D) \| SOT-186VAR
IRFS9141	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 13.2A I(D) \| SOT-186VAR
IRFS9142	SAMSUNG	获取价格	Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Me
IRFS9143	SAMSUNG	获取价格	Power Field-Effect Transistor, 10.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFS9240	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 7.6A I(D) \| SOT-186VAR
IRFS9241	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 7.6A I(D) \| SOT-186VAR
IRFS9520	SAMSUNG	获取价格	Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal
IRFS9521	SAMSUNG	获取价格	Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-
IRFS9522	SAMSUNG	获取价格	Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal
IRFS9523	SAMSUNG	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-