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IRFS7730-7P PDF预览

IRFS7730-7P

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 524K
描述
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装

IRFS7730-7P 数据手册

 浏览型号IRFS7730-7P的Datasheet PDF文件第2页浏览型号IRFS7730-7P的Datasheet PDF文件第3页浏览型号IRFS7730-7P的Datasheet PDF文件第4页浏览型号IRFS7730-7P的Datasheet PDF文件第5页浏览型号IRFS7730-7P的Datasheet PDF文件第6页浏览型号IRFS7730-7P的Datasheet PDF文件第7页 
StrongIRFET™  
IRFS7730-7PPbF  
HEXFET® Power MOSFET  
Application  
 Brushed motor drive applications  
 BLDC motor drive applications  
 Battery powered circuits  
 Half-bridge and full-bridge topologies  
 Synchronous rectifier applications  
 Resonant mode power supplies  
 OR-ing and redundant power switches  
 DC/DC and AC/DC converters  
 DC/AC inverters  
VDSS  
RDS(on) typ.  
max  
75V  
1.70m  
2.00m  
269A  
ID (Silicon Limited)  
ID (Package Limited)  
240A  
Benefits  
 Improved gate, avalanche and dynamic dV/dt ruggedness  
 Fully characterized capacitance and avalanche SOA  
 Enhanced body diode dV/dt and dI/dt capability  
 Lead-free, RoHS compliant  
G
D
S
Gate  
Drain  
Source  
Base Part Number  
Package Type  
Standard Pack  
Complete Part Number  
Form  
Tube  
Quantity  
50  
IRFS7730-7PPbF  
IRFS7730TRL7PP  
IRFS7730-7PPbF  
D2Pak-7PIN  
Tape and Reel Left  
800  
8
6
4
2
0
300  
250  
200  
150  
100  
50  
I
= 100A  
D
Limited By Package  
T
= 125°C  
J
T
= 25°C  
J
0
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
V
Gate -to -Source Voltage (V)  
C
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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© 2014 International Rectifier  
Submit Datasheet Feedback  
November 7, 2014  

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