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IRFS7540 PDF预览

IRFS7540

更新时间: 2024-11-28 14:53:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 655K
描述
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package

IRFS7540 数据手册

 浏览型号IRFS7540的Datasheet PDF文件第2页浏览型号IRFS7540的Datasheet PDF文件第3页浏览型号IRFS7540的Datasheet PDF文件第4页浏览型号IRFS7540的Datasheet PDF文件第5页浏览型号IRFS7540的Datasheet PDF文件第6页浏览型号IRFS7540的Datasheet PDF文件第7页 
StrongIRFET™  
IRFB7540PbF  
IRFS7540PbF  
IRFSL7540PbF  
HEXFET® Power MOSFET  
Application  
 Brushed Motor drive applications  
 BLDC Motor drive applications  
 Battery powered circuits  
 Half-bridge and full-bridge topologies  
 Synchronous rectifier applications  
 Resonant mode power supplies  
 OR-ing and redundant power switches  
 DC/DC and AC/DC converters  
 DC/AC Inverters  
VDSS  
60V  
RDS(on) typ.  
4.2m  
5.1m  
110A  
max  
ID  
D
D
S
Benefits  
S
S
D
G
D
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
 Fully Characterized Capacitance and Avalanche SOA  
 Enhanced body diode dV/dt and dI/dt Capability  
 Lead-Free, RoHS Compliant  
G
G
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
IRFB7540PbF  
IRFSL7540PbF  
TO-220  
TO-262  
Tube  
IRFB7540PbF  
IRFSL7540PbF  
IRFS7540PbF  
Tube  
50  
Tube  
50  
IRFS7540PbF  
D2-Pak  
Tape and Reel Left  
800  
IRFS7540TRLPbF  
120  
100  
80  
60  
40  
20  
0
14  
12  
10  
8
I
= 65A  
D
T
= 125°C  
J
6
4
T
= 25°C  
J
2
25  
50  
75  
100  
125  
150  
175  
4
6
8
10 12 14 16 18 20  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
November 6, 2014  

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