Datasheet > IRFR9024NTR

IRFR9024NTR

更新时间： 2024-05-23 22:22:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	1687K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-20A;Vgs(th)(V):±20;漏源导通电阻:75mΩ@-10V

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IRFR9024NTR 数据手册

UMW

IRFR9024

-60V P-Channel Enhancement Mode MOSFET

Description

The IRFR0924NTR uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection or in other

Switching application.

General Features

V_DS= -60V I_D=-20 A

R_DS(ON)< 75mΩ @ V_GS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Symbol

VDS

Parameter

Rating

-60

Units

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

-20

Continuous Drain Current, V_GS@ -10V¹

Pulsed Drain Current²

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

IDM

-12

-4.3

-3.5

-36

EAS

Single Pulse Avalanche Energy³

35.4

-26.6

34.7

IAS

Avalanche Current

Total Power Dissipation⁴

P_D@T_C=25℃

P_D@T_A=25℃

TSTG

Total Power Dissipation⁴

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

-55 to 150

℃

T_J

R_θJA

℃/W

R_θJC

3.6

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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