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IRFR9012TRPBF PDF预览

IRFR9012TRPBF

更新时间： 2024-10-02 15:45:59
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 1234K
描述
TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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IRFR9012TRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-252
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.11其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：240 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：4.5 A最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：0.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：25 W
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRFR9012TRPBF 数据手册

 浏览型号IRFR9012TRPBF的Datasheet PDF文件第2页浏览型号IRFR9012TRPBF的Datasheet PDF文件第3页浏览型号IRFR9012TRPBF的Datasheet PDF文件第4页浏览型号IRFR9012TRPBF的Datasheet PDF文件第5页浏览型号IRFR9012TRPBF的Datasheet PDF文件第6页浏览型号IRFR9012TRPBF的Datasheet PDF文件第7页 
IRFR9012, IRFU9012, SiHFR9012, SiHFU9012  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
•
•
Surface Mountable (Order as IRFR9012, SiHFR9012)  
Straight Lead Option (Order as IRFU9012, SiHFU9012)  
- 50  
Available  
R
DS(on) (Ω)  
VGS = - 10 V  
0.70  
• Repetitive Avalanche Ratings  
• Dynamic dV/dt Rating  
• Simple Drive Requirements  
• Ease of Paralleling  
RoHS*  
Qg (Max.) (nC)  
9.1  
3.0  
5.9  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
Configuration  
Single  
DESCRIPTION  
The Power MOSFET technology is the key to Vishay’s  
advanced line of Power MOSFET transistors. The efficient  
geometry and unique processing of this latest “State of the  
Art” design achieves: very low on-state resistance combined  
with high transconductance; superior reverse energy and  
diode recovery dV/dt capability.  
S
DPAK  
(TO-252)  
IPAK  
(TO-251)  
G
D
The Power MOSFET transistors also feature all of the well  
established advantages of MOSFET’S such as voltage  
control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
D
S
G
S
D
Surface mount packages enhance circuit performance by  
reducing stray inductances and capacitance. The DPAK  
(TO-252) surface mount package brings the advantages of  
Power MOSFET’s to high volume applications where PC  
Board surface mounting is desirable. The surface mount  
option IRFR9012, SiHFR9012 is provided on 16 mm tape.  
The straight lead option IRFU9012, SiHFU9012 of the device  
is called the IPAK (TO-251).  
They are well suited for applications where limited heat  
dissipation is required such as, computers and peripherals,  
telecommunication equipment, DC/DC converters, and a  
wide range of consumer products.  
G
D
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR9012PbF  
SiHFR9012-E3  
IRFR9012  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR9012TRLPbFa  
SiHFR9012TL-E3a  
IRFR9012TRLa  
SiHFR9012TLa  
IPAK (TO-251)  
IRFU9012PbF  
SiHFU9012-E3  
IRFU9012  
IRFR9012TRPbFa  
SiHFR9012T-E3a  
IRFR9012TRa  
Lead (Pb)-free  
SnPb  
SiHFR9012  
SiHFR9012Ta  
SiHFU9012  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
- 50  
20  
V
TC = 25 °C  
TC =100°C  
- 4.5  
- 2.8  
- 18  
Continuous Drain Current  
V
GS at - 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.20  
240  
- 5.3  
2.5  
25  
5.8  
W/°C  
mJ  
A
mJ  
W
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
EAR  
PD  
dV/dt  
TJ, Tstg  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
TC = 25 °C  
V/ns  
- 55 to + 150  
300  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).  
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, RG = 25 Ω, peak IL = - 5.3 A.  
c. ISD ≤ - 5.3 A, dI/dt ≤ - 80 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C, suggested RG = 24 Ω.  
d. 0.063" (1.6 mm) from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91377  
S09-0373-Rev. A, 09-Mar-09  
www.vishay.com  
1
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