型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR9012 | VISHAY |
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TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General | |
IRFR9012-T1 | SAMSUNG |
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Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta | |
IRFR9012TR | VISHAY |
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TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General | |
IRFR9012TRL | VISHAY |
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TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General | |
IRFR9012TRPBF | VISHAY |
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TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA | |
IRFR9014 | INFINEON |
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Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) | |
IRFR9014 | SAMSUNG |
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P-CHANNEL POWER MOSFETS | |
IRFR9014 | KERSEMI |
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Power MOSFET | |
IRFR9014 | VISHAY |
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Power MOSFET | |
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 | VISHAY |
获取价格 |
Power MOSFET |