Datasheet > IRFR9010TRLPBF

IRFR9010TRLPBF

更新时间： 2024-10-02 15:35:19

品牌	Logo	应用领域
威世 - VISHAY		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	287K
描述
TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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IRFR9010TRLPBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-252
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.09	其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	136 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	50 V
最大漏极电流 (Abs) (ID)：	5.3 A	最大漏极电流 (ID)：	5.3 A
最大漏源导通电阻：	0.5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	25 W
最大脉冲漏极电流 (IDM)：	21 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFR9010TRLPBF 数据手册

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Surface Mountable (Order as IRFR9010,

SiHFR9010)

V_DS(V)

_DS(on)()

Q_g(Max.) (nC)

- 50

• Straight Lead Option (Order as IRFU9010,

V_GS= - 10 V

0.50

SiHFU9010)

9.1

3.0

5.9

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Configuration

Single

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

DPAK

(TO-252)

IPAK

(TO-251)

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

DPAK (TO-252)

SiHFR9010-GE3

IRFR9010PbF

SiHFR9010-E3

DPAK (TO-252)

IPAK (TO-251)

SiHFU9010-GE3

IRFU9010PbF

SiHFU9010-E3

SiHFR9010TR-GE3^a

IRFR9010TRPbF^a

SiHFR9010T-E3^a

SiHFR9010TRL-GE3^a

IRFR9010TRLPbF^a

SiHFR9010TL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 50

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

- 5.3

- 3.3

- 21

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

136

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 5.3

2.5

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 150

300

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 9.7 mH, R_g= 25 , peak I_L= - 5.3 A.

c. I_SD - 5.3 A, dI/dt  - 80 A/μs, V_DD 40 V, T_J 150 °C, suggested R_g= 24 .

d. 0.063" (1.6 mm) from case.

S13-0167-Rev. D, 04-Feb-13

Document Number: 91378

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRFR9010TRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR9010TRPBF	VISHAY	获取价格	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA
IRFR9010TRR	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9012	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General
IRFR9012-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9012TR	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General
IRFR9012TRL	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General
IRFR9012TRPBF	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA
IRFR9014	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)
IRFR9014	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRFR9014	KERSEMI	获取价格	Power MOSFET

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