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IRFR4620 PDF预览

IRFR4620

更新时间: 2023-09-03 20:30:56
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 394K
描述
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

IRFR4620 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.13
雪崩能效等级(Eas):113 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):24 A最大漏极电流 (ID):24 A
最大漏源导通电阻:0.078 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):144 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR4620 数据手册

 浏览型号IRFR4620的Datasheet PDF文件第2页浏览型号IRFR4620的Datasheet PDF文件第3页浏览型号IRFR4620的Datasheet PDF文件第4页浏览型号IRFR4620的Datasheet PDF文件第5页浏览型号IRFR4620的Datasheet PDF文件第6页浏览型号IRFR4620的Datasheet PDF文件第7页 
PD -96207A  
IRFR4620PbF  
IRFU4620PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
S
VDSS  
RDS(on) typ.  
200V  
64m  
78m  
24A  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
D
S
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
G
DPak  
IRFR4620PbF  
IPAK  
IRFU4620PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
24  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
17  
A
100  
PD @TC = 25°C  
W
144  
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
54  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
113  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through ˆ are on page 11  
www.irf.com  
1
06/08/09  

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