Datasheet > IRFR3708

IRFR3708

更新时间： 2024-09-10 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		开关
页数	文件大小	规格书
9页	3388K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册

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IRFR3708 数据手册

PD - 93935B

IRFR3708

IRFU3708

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

^lHigh Frequency DC-DC Isolated Converters

with Synchronous Rectification for Telecom

and Industrial Use

V_DSS

30V

R_DS(on)max

I_D

61A

12.5mΩ

l High Frequency Buck Converters for

Computer Processor Power

Benefits

^lUltra-Low Gate Impedance

^lVery Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

D-Pak

IRFR3708

I-Pak

IRFU3708

and Current

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 12

244

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.58

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.73

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

www.kersemi.com

8/22/00

12 3 4 5 6 7...9

中文翻译

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与IRFR3708相关器件

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IRFR3708PBF	KERSEMI	获取价格	SMPS MOSFET
IRFR3708PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFR3708TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
IRFR3708TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
IRFR3708TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
IRFR3708TRR	INFINEON	获取价格	暂无描述
IRFR3709Z	KERSEMI	获取价格	High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3709Z	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3709Z	FREESCALE	获取价格	HEXFET Power MOSFET
IRFR3709ZCPBF	INFINEON	获取价格	HEXFET Power MOSFET