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IRFR3707ZTR PDF预览

IRFR3707ZTR

更新时间: 2024-05-23 22:23:12
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
7页 531K
描述
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):56A;Vgs(th)(V):±20;漏源导通电阻:9.5mΩ@10V;漏源导通电阻:12.5mΩ@4.5V

IRFR3707ZTR 数据手册

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R
IRFR3707  
30V N -Channel MOSFET  
UMW  
Applications  
High Frequency Synchronous Buck  
Converters for Computer Processor Power  
Benefits  
Very Low RDS(on) at 4.5V VGS  
Ultra - Low Gate Impedance  
Fully Characterized Avalanche Voltage and Current  
Lead-Free  
V
30V  
DSS  
=
RDS(on) max  
9.5m  
=
Qg  
9.6nC  
=
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain -to-Source Voltage  
Gate-to-Source Voltage  
30  
V
V
VGS  
± 20  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
56  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
39  
220  
A
PD @TC = 25°C  
PD @TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
50  
W
W
25  
0.33  
W/°C  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case  
3.0  
50  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
°C/W  
Junction-to-Ambient  
110  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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