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IRFR3707ZPBFTRR PDF预览

IRFR3707ZPBFTRR

更新时间: 2024-02-14 02:29:33
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 363K
描述
Transistor

IRFR3707ZPBFTRR 数据手册

 浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第2页浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第3页浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第4页浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第5页浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第6页浏览型号IRFR3707ZPBFTRR的Datasheet PDF文件第7页 
PD - 95443B  
IRFR3707ZPbF  
IRFU3707ZPbF  
Applications  
HEXFET® Power MOSFET  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS RDS(on) max  
Qg  
9.5m  
30V  
9.6nC  
l Lead-Free  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3707ZPbF  
I-Pak  
IRFU3707ZPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
V
30  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
GS  
I
I
I
@ TC = 25°C  
A
56  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
@ TC = 100°C  
39  
220  
DM  
P
P
@TC = 25°C  
W
50  
25  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
D
D
@TC = 100°C  
0.33  
W/°C  
°C  
T
-55 to + 175  
Operating Junction and  
J
T
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
STG  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.0  
Units  
°C/W  
Rθ  
JC  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
50  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
Notes  through are on page 11  
www.irf.com  
1
05/14/08  

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