Datasheet > 晶体管 > 功率场效应晶体管> IRFR3707ZCPBF

IRFR3707ZCPBF

更新时间： 2024-11-24 02:51:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	295K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFR3707ZCPBF 数据手册

PD - 96045

IRFR3707ZCPbF

IRFU3707ZCPbF

Applications

HEXFET^®Power MOSFET

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSSR_DS(on)max

9.5m

30V

9.6nC

l Lead-Free

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

I-Pak

IRFU3707ZCPbF

D-Pak

IRFR3707ZCPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 100°C

220

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

@T_C= 100°C

0.33

W/°C

°C

-55 to + 175

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

STG

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.0

Units

R_θ

°C/W

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

Notes through ꢀ are on page 11

www.irf.com

06/22/06

12 3 4 5 6 7...11

中文翻译

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