Datasheet > IRFR18N15DTRL

IRFR18N15DTRL

更新时间： 2024-11-06 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	161K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 18A I(D) \| TO-252AA

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中文翻译

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数据手册

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IRFR18N15DTRL 数据手册

PD- 93815A

IRFR18N15D

IRFU18N15D

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

150V

R_DS(on)max

I_D

18A

0.125Ω

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR18N15D

I-Pak

IRFU18N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

110

W/°C

Linear Derating Factor

0.71

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.3

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies

l Telecom 48V input DC-DC Active Clamp Reset Forward Converter

Notes through are on page 10

www.irf.com

2/23/00

12 3 4 5 6 7...10

中文翻译

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IRFR18N15DTRLP	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
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