Datasheet > IRFR120NTR

IRFR120NTR

更新时间： 2024-11-22 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	512K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:9.4A;Vgs(th)(V):±20;漏源导通电阻:21mΩ@10V

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IRFR120NTR 数据手册

UMW

IRFR120N

Description

The D-PAK is designed for surface mounting

using vapor phase,infraredor wave soldering

techniques. Power dissipation levels up to

1.5 watts are possible in typical surface mo-

unt applications.

Features

V_DS(V) = 100V

I_D= 9.4A (V_GS= 10V)

R_DS(ON)=210mΩ (V_GS= 10V)

www.umw-ic.com

UTD Semiconductor Co.,Limited

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型号	品牌	获取价格	描述	数据表
IRFR120NTRL	INFINEON	获取价格	Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTRR	INFINEON	获取价格	Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) =
IRFR120PBF	VISHAY	获取价格	IRFR120
IRFR120T_R4941	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRFR120-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRFR120TR	VISHAY	获取价格	IRFR120