Datasheet > IRFR024N

IRFR024N

更新时间： 2024-09-28 11:59:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	364K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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数据手册

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IRFR024N 数据手册

IRFR/U024N

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lSurface Mount (IRFR024N)

^lStraight Lead (IRFU024N)

^lAdvanced Process Technology

^lFast Switching

V_DSS= 55V

R_DS(on)= 0.075Ω

^lFully Avalanche Rated

I_D= 17Aꢀ

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D -Pak

TO -252AA

I-Pak

TO -251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.5

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

–––

110

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中文翻译

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与IRFR024N相关器件

型号	品牌	获取价格	描述	数据表
IRFR024NPBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR024NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR024NTR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRFR024NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR024NTRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRFR024NTRL	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR024NTRLPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR024NTRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRFR024NTRR	INFINEON	获取价格	暂无描述
IRFR024NTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met