IRFR024

更新时间： 2024-11-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1986K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR024 数据手册

IRFR024, IRFU024, SiHFR024, SiHFU024

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Surface Mount (IRFR024/SiHFR024)

0.10

R_DS(on)(Ω)

V_GS= 10 V

RoHS*

• Straight Lead (IRFU024/SiHFU024)

COMPLIANT

Q_g(Max.) (nC)

5.8

• Available in Tape and Reel

• Fast Switching

_gs(nC)

_gd(nC)

Configuration

Single

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

IRFU024PbF

SiHFU024-E3

IRFU024

IRFR024PbF

SiHFR024-E3

IRFR024

IRFR024TRPbF^a

SiHFR024T-E3^a

IRFR024TR^a

Lead (Pb)-free

IRFR024TRL^a

SiHFR024TL^a

SnPb

SiHFR024

SiHFR024T^a

SiHFU024

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

9.0

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

2.5

dV/dt

5.5

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91264

S-Pending-Rev. A, 17-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

下载PDF

IRFR024 替代型号

型号	品牌	替代类型	描述	数据表
STD12NF06T4	STMICROELECTRONICS	功能相似	N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
STD12NF06LT4	STMICROELECTRONICS	功能相似	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr

与IRFR024相关器件

型号	品牌	获取价格	描述	数据表
IRFR024, IRFU024, SiHFR024, SiHFU024	VISHAY	获取价格	Power MOSFET
IRFR024_10	VISHAY	获取价格	Power MOSFET
IRFR024A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 15A I(D) \| TO-252AA
IRFR024ATF	SAMSUNG	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFR024N	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=1
IRFR024N	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFR024NPBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR024NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR024NTR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRFR024NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时

与IRFR024相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR024

IRFR024 数据手册

IRFR024 替代型号

与IRFR024相关器件

与IRFR024相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR024

IRFR024 数据手册

IRFR024 替代型号

与IRFR024相关器件

与IRFR024相关文章

您还可以找

您在本页遇到什么问题？