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IRFP9150_R4941 PDF预览

IRFP9150_R4941

更新时间: 2024-11-18 20:04:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 103K
描述
Transistor

IRFP9150_R4941 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):25 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):150 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IRFP9150_R4941 数据手册

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IRFP9150  
Data Sheet  
January 2002  
25A, 100V, 0.150 Ohm, P-Channel Power  
MOSFET  
Features  
• 25A, 100V  
This advanced power MOSFET is designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. It is a P-Channel  
enhancement mode silicon-gate power field effect transistor  
designed for applications such as switching regulators,  
switching convertors, motor drivers, relay drivers, and drivers  
for high power bipolar switching transistors requiring high  
speed and low gate drive power. These types can be  
operated directly from integrated circuits.  
• r = 0.150Ω  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
The P-Channel IRFP9150 is an approximate electrical  
complement to the N-channel IRFP150.  
D
Formerly developmental type TA49230.  
G
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
IRFP9150  
S
IRFP9150  
TO-247  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC STYLE TO-247  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
©2002 Fairchild Semiconductor Corporation  
IRFP9150 Rev. B  

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