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IRFP450NPBF PDF预览

IRFP450NPBF

更新时间: 2024-11-09 11:09:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 166K
描述
Power MOSFET

IRFP450NPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.29雪崩能效等级(Eas):170 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.37 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):56 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRFP450NPBF 数据手册

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IRFP450N, SiHFP450N  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Gate Charge Qg Results in Simple Drive  
Requirement  
PRODUCT SUMMARY  
VDS (V)  
500  
RoHS  
RDS(on) (Max.) (Ω)  
Qg (Max.) (nC)  
VGS = 10 V  
0.37  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
COMPLIANT  
77  
26  
• Fully  
Characterized  
Capacitance  
and  
Q
Q
gs (nC)  
gd (nC)  
Avalanche Voltage and Current  
• Effective Coss Specified  
• Lead (Pb)-free  
34  
Configuration  
Single  
D
APPLICATIONS  
TO-247  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
G
TYPICAL SMPS TOPOLOGIES  
S
• Two Transistor Forward  
• Half Bridge and Full Bridge  
• PFC Boost  
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-247  
IRFP450NPbF  
SiHFP450N-E3  
IRFP450N  
Lead (Pb)-free  
SnPb  
SiHFP450N  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
500  
V
VGS  
30  
T
C = 25 °C  
14  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
8.8  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
1.6  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
170  
14  
EAR  
20  
200  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).  
c. ISD 14 A, dI/dt 510 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
Document Number: 91232  
S-Pending-Rev. b, 26-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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