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IRFP450NPBF

更新时间: 2024-11-24 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 175K
描述
HEXFET㈢Power MOSFET

IRFP450NPBF 数据手册

 浏览型号IRFP450NPBF的Datasheet PDF文件第2页浏览型号IRFP450NPBF的Datasheet PDF文件第3页浏览型号IRFP450NPBF的Datasheet PDF文件第4页浏览型号IRFP450NPBF的Datasheet PDF文件第5页浏览型号IRFP450NPBF的Datasheet PDF文件第6页浏览型号IRFP450NPBF的Datasheet PDF文件第7页 
PD-95663  
SMPS MOSFET  
IRFP450NPbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
500V  
Rds(on) max  
ID  
14A  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Lead-Free  
0.37Ω  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Effective Coss Specified (See AN 1001)  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
14  
8.8  
A
56  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.6  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Two transistor Forward  
l Half Bridge and Full Bridge  
l PFC Boost  
Notes  through are on page 8  
www.irf.com  
1
7/30/04  

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