Datasheet > IRFP4368

IRFP4368

更新时间： 2024-10-01 01:21:31

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	336K
描述
N-Channel MOSFET Transistor

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中文翻译

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数据手册

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IRFP4368 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRFP4368，IIRFP4368

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤1.85mΩ

·Enhancement mode:

Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·High Efficiency Synchronous Rectification in SMPS

·Uninterruptible Power Supply

·High Speed Power Switching

·Hard Switched And High Frequency Circuits

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

195

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

1280

520

P_D

℃

175

T_j

-55~175

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(j-c)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

0.29

Channel-to-ambient thermal resistance

Rth(j-a)

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

中文翻译

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