IRFP350LC

更新时间： 2024-11-01 22:36:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	296K
描述
Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

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PD - 9.1229

IRFP350LC

HEXFET^®Power MOSFET

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V V_gsRating

Reduced C_iss, C_oss, C_rss

Isolated Central Mounting Hole

Dynamic dv/dt Rated

V_DSS= 400V

R_DS(on)= 0.30Ω

I_D= 16A

Repetitive Avalanche Rated

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings. These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

9.9

P_D@T_C= 25°C

Power Dissipation

190

W/°C

Linear Derating Factor

1.5

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±30

Single Pulse Avalanche Energy

Avalanche Current

390

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.24

Max.

0.65

––––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

––––

To Order

Revision 0

12 3 4 5 6 7 8

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