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IRFP140A

更新时间: 2024-11-23 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 257K
描述
Advanced Power MOSFET

IRFP140A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
雪崩能效等级(Eas):513 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):31 A
最大漏极电流 (ID):31 A最大漏源导通电阻:0.052 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):131 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP140A 数据手册

 浏览型号IRFP140A的Datasheet PDF文件第2页浏览型号IRFP140A的Datasheet PDF文件第3页浏览型号IRFP140A的Datasheet PDF文件第4页浏览型号IRFP140A的Datasheet PDF文件第5页浏览型号IRFP140A的Datasheet PDF文件第6页浏览型号IRFP140A的Datasheet PDF文件第7页 
IRFP140A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.052  
ID = 31 A  
Improved Gate Charge  
Extended Safe Operating Area  
TO-3P  
O
175 C Operating Temperature  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
1
2
3
Lower RDS(ON) : 0.041 (Typ.)  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
100  
31  
O
Continuous Drain Current (TC=25  
)
C
ID  
A
O
Continuous Drain Current (TC=100  
Drain Current-Pulsed  
)
C
21.9  
120  
IDM  
VGS  
EAS  
IAR  
1
A
V
O
+
_
Gate-to-Source Voltage  
20  
2
O
Single Pulsed Avalanche Energy  
Avalanche Current  
513  
31  
mJ  
A
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
13.1  
6.5  
O
3
Peak Diode Recovery dv/dt  
O
O
Total Power Dissipation (T =25  
)
W
131  
0.88  
C
C
PD  
TJ , TSTG  
TL  
O
Linear Derating Factor  
W/  
C
Operating Junction and  
Storage Temperature Range  
- 55 to +175  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
1.14  
--  
Units  
--  
0.24  
--  
O
R qCS  
C
/W  
RqJA  
Junction-to-Ambient  
40  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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