IRFP064VPBF

更新时间： 2024-02-13 05:48:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	169K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFP064VPBF 数据手册

PD - 95501

IRFP064VPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

l Lead-Free

V_DSS= 60V

R_DS(on)= 5.5mΩ

I_D= 130A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

TheTO-247packageispreferredforcommercial-industrial

applications where higher power levels preclude the use

of TO-220 devices. The TO-247 is similar but superior to

the earlier TO-218 package because of its isolated

mounting hole.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

130

520

250

1.7

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

I_AR

Gate-to-Source Voltage

± 20

130

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.7

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.60

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

07/06/04

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中文翻译

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IRFP064VPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP3306PBF	INFINEON	类似代替	HEXFET Power MOSFET

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