Datasheet > IRFP064PBF (KRFP064PBF)

IRFP064PBF (KRFP064PBF)

更新时间： 2024-06-27 12:13:08

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	3803K
描述
N-Channel MOSFET

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数据手册

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IRFP064PBF (KRFP064PBF) 数据手册

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DIP Type

MOSFET

N-Channel MOSFET

IRFP064PBF (KRFP064PBF)

TO-247

■ Features

● VDS (V) = 60V

● ID = 70 A (VGS = 10V)

● R^DS(ON)＜ 9mΩ (VGS = 10V)

● Very Low Thermal Resistance

● Isolated Central Mounting Hole

● Fast Switching

● Dynamic dV/dt Rating

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

Tc=25℃

Tc=70℃

Continuous Drain Current

Pulsed Drain Current

520

Repetitive Avalanche Current

Power Dissipation

300

Tc=25℃

Linear Derating Factor

W/℃

Single Pulse Avalanche Energy (Note.1)

Repetitive Avalanche Energy

Peak Diode Recovery dV/dt (Note.2)

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Sink

Thermal Resistance.Junction- to-Case

Junction Temperature

1000

dV/dt

4.5

V/ns

thJA

thJS

0.24 (typ)

0.5

℃/W

RthJC

175

℃

Storage Temperature Range

stg

-55 to 175

Note.1 : VDD = 25V, starting T

= 25°C, L= 69uH, Rg = 25Ω, IAS = 130A

≤ 175°C.

Note.2 : I^SD≤ 130A, dI/dt ≤ 300A/us, VDD ≤ VDS, T

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