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IRFMG50SCV PDF预览

IRFMG50SCV

更新时间: 2024-11-21 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 193K
描述
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TXV

IRFMG50SCV 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):860 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (ID):5.6 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):22 A表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFMG50SCV 数据手册

 浏览型号IRFMG50SCV的Datasheet PDF文件第2页浏览型号IRFMG50SCV的Datasheet PDF文件第3页浏览型号IRFMG50SCV的Datasheet PDF文件第4页浏览型号IRFMG50SCV的Datasheet PDF文件第5页浏览型号IRFMG50SCV的Datasheet PDF文件第6页浏览型号IRFMG50SCV的Datasheet PDF文件第7页 
PD-90711C  
IRFMG50  
1000V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFMG50  
2.0Ω  
5.6A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-state  
resistance combined with high transconductance.  
HEXFET transistors also feature all of the well-established  
advantages of MOSFETs, such as voltage control, very  
fast switching, ease of paralleling and electrical parameter  
temperature stability. They are well-suited for applications  
such as switching power supplies, motor controls,  
inverters, choppers, audio amplifiers, high energy pulse  
circuits, and virtually any application where high reliability  
is required. The HEXFET transistor’s totally isolated  
package eliminates the need for additional isolating  
material between the device and the heatsink. This  
improves thermal efficiency and reduces drain capacitance.  
TO-254AA  
Features:  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
n Electrically Isolated  
n Ceramic Eyelets  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C Continuous Drain Current  
5.6  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
3.5  
22.4  
150  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
860  
mJ  
A
AS  
I
5.6  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
1.0  
T
-55 to 150  
J
T
Storage Temperature Range  
°C  
g
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
9.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
06/23/08  

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