是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.25 | 其他特性: | HIGH RELIABILITY, AVALANCHE RATED |
雪崩能效等级(Eas): | 620 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 35 A | 最大漏源导通电阻: | 0.017 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 380 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFM064D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
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IRFM064SCX | INFINEON |
获取价格 |
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX |
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IRFM064U | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
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IRFM064UPBF | INFINEON |
获取价格 |
暂无描述 |
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IRFM110 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.5A I(D) | SOT-223 |
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IRFM110A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |
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IRFM110AD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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IRFM110AS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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IRFM110ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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IRFM120A | FAIRCHILD |
获取价格 |
IEEE802.3af Compatible |
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