Datasheet > IRFM054SCX

IRFM054SCX

更新时间： 2023-12-06 20:04:09

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1141K
描述
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFM054SCX 数据手册

PD-90709D

IRFM054

60V, N-CHANNEL

HEXFET MOSFET TECHNOLOGY

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

R_DS(on)

I_D

IRFM054

35A*

0.027

Description

TO-254AA

HEXFET MOSFET technology is the key to IR HiRel

advanced line of power MOSFET transistors. The efficient

geometry design achieves very low on-state resistance

combined with high trans conductance. HEXFET transistors

also feature all of the well-established advantages of

MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package

eliminates the need for additional isolating material

between the device and the heat sink. This improves

thermal efficiency and reduces drain capacitance.

Features



Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light Weight

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

35*

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

35*

220

150

1.2

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

480

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.5

V/ns

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

* Current is limited by package

For Footnotes refer to the page 2.

2021-04-30

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

下载PDF

与IRFM054SCX相关器件

型号	品牌	获取价格	描述	数据表
IRFM054U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRFM054UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
IRFM064	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM064CSCS	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Met
IRFM064CSCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Met
IRFM064D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRFM064SCX	INFINEON	获取价格	60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX
IRFM064U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRFM064UPBF	INFINEON	获取价格	暂无描述
IRFM110	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 1.5A I(D) \| SOT-223