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IRFIZ44GPBF PDF预览

IRFIZ44GPBF

更新时间： 2024-11-26 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1421K
描述
Power MOSFET

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中文翻译

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IRFIZ44GPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：6 weeks风险等级：5.02
Is Samacsys：N雪崩能效等级（Eas）：100 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：30 A
最大漏极电流 (ID)：30 A最大漏源导通电阻：0.028 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：48 W
最大脉冲漏极电流 (IDM)：120 A认证状态：Not Qualified
子类别：FET General Purpose Powers表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFIZ44GPBF 数据手册

 浏览型号IRFIZ44GPBF的Datasheet PDF文件第2页浏览型号IRFIZ44GPBF的Datasheet PDF文件第3页浏览型号IRFIZ44GPBF的Datasheet PDF文件第4页浏览型号IRFIZ44GPBF的Datasheet PDF文件第5页浏览型号IRFIZ44GPBF的Datasheet PDF文件第6页浏览型号IRFIZ44GPBF的Datasheet PDF文件第7页 
IRFIZ44G, SiHFIZ44G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Isolated Package  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
R
DS(on) (Ω)  
VGS = 10 V  
0.028  
RoHS*  
f = 60 Hz)  
Qg (Max.) (nC)  
95  
27  
COMPLIANT  
• Sink to Lead Creepage Distance = 4.8 mm  
• 175 °C Operating Temperature  
• Dynamic dV/dt Rating  
Q
Q
gs (nC)  
gd (nC)  
46  
Configuration  
Single  
• Low Thermal Resistance  
D
TO-220 FULLPAK  
• Lead (Pb)-free Available  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. The isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFIZ44GPbF  
SiHFIZ44G-E3  
IRFIZ44G  
Lead (Pb)-free  
SnPb  
SiHFIZ44G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
60  
V
VGS  
20  
T
C = 25 °C  
30  
21  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
Pulsed Drain Currenta  
IDM  
120  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
0.32  
100  
W/°C  
mJ  
EAS  
PD  
Maximum Power Dissipation  
T
C = 25 °C  
48  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).  
c. ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91189  
S-Pending-Rev. A, 16-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
12345678

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与IRFIZ44GPBF相关器件

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IRFIZ44N INFINEON

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 		Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A)
IRFIZ44N-003 INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-004PBF INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-005 INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-005PBF INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-006 INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-006PBF INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-009PBF INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-010 INFINEON

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 		Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-010PBF INFINEON

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 		28A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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