Datasheet > IRFIZ24A

IRFIZ24A

更新时间： 2024-11-05 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	222K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 17A I(D) \| TO-262AA

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中文翻译

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数据手册

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IRFIZ24A 数据手册

IRFW/IZ24A

FEATURES

BV_DSS= 60 V

R_DS(on)= 0.07Ω

I_D= 17 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

175 C Operating Temperature

Lower Leakage Current: 10 A (Max.) @ V_DS= 60V

Lower R_DS(ON): 0.050 (Typ.)

Ω

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

149

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.4

5.5

3.8

V/ns

Total Power Dissipation (T_A=25°C)

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

P_D

0.29

W/°C

Operating Junction and

T_J, T_STG

- 55 to +175

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_θJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

3.43

R_θJA

Junction-to-Ambient

°C/W

R_θJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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与IRFIZ24A相关器件

型号	品牌	获取价格	描述	数据表
IRFIZ24E	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A)
IRFIZ24E-002PBF	INFINEON	获取价格	14A, 60V, 0.071ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFIZ24E-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ24E-006	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ24E-006PBF	INFINEON	获取价格	14A, 60V, 0.071ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFIZ24E-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ24E-010	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ24E-010PBF	INFINEON	获取价格	14A, 60V, 0.071ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFIZ24E-011PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ24E-012	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.071ohm, 1-Element, N-Channel, Silicon, Met