5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFI9630G-019PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-019PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-024 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-024PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-024PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-029 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-029PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-029PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-030 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
| IRFI9630G-030PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
