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IRFI9520GPBF

更新时间： 2024-09-27 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1463K
描述
Power MOSFET

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数据手册
替代型号

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IRFI9520GPBF 数据手册

IRFI9520G, SiHFI9520G

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

- 100

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

Available

_DS(on)(Ω)

V_GS= - 10 V

0.60

RoHS*

Q_g(Max.) (nC)

3.0

9.0

• Sink to Lead Creepage Distance = 4.8 mm

• P-Channel

COMPLIANT

_gs(nC)

_gd(nC)

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

Configuration

Single

• Low Thermal Resistance

• Lead (Pb)-free Available

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI9520GPbF

SiHFI9520G-E3

IRFI9520G

Lead (Pb)-free

SnPb

SiHFI9520G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

- 5.2

- 3.6

- 21

Continuous Drain Current

_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.24

300

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 5.2

3.7

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.5

- 55 to + 175

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 16 mH, R_G= 25 Ω, I_AS= - 5.2 A (see fig. 12).

c. I_SD≤ - 6.8 A, dI/dt ≤ 110 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91162

S-81361-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFI9520GPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFI9520G	VISHAY	功能相似	Power MOSFET

与IRFI9520GPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFI9520N	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 5.5A I(D) \| TO-220AB
IRFI9530G	INFINEON	获取价格	Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)
IRFI9530G	VISHAY	获取价格	Power MOSFET
IRFI9530G-002	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-003	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-004	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
IRFI9530G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met

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