Datasheet > IRFI620A

IRFI620A

更新时间： 2024-11-08 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	262K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-262AA

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IRFI620A 数据手册

IRFW/I620A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.8

I_D= 5 A

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 200V

Low R_DS(ON): 0.626 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

200

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^o

Continuous Drain Current (T_C=100^o

)

I_D

)

3.2

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.7

5.0

3.1

V/ns

Total Power Dissipation (T =25^o

)

Total Power Dissipation (T_C=25^o

P_D

W/^oC

Linear Derating Factor

0.38

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_qJC

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

Max.

Units

2.65

^oC/W

R_qJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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