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IRFI550ATU

更新时间: 2024-11-21 20:07:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 320K
描述
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

IRFI550ATU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:I2PAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):640 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.8 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFI550ATU 数据手册

 浏览型号IRFI550ATU的Datasheet PDF文件第2页浏览型号IRFI550ATU的Datasheet PDF文件第3页浏览型号IRFI550ATU的Datasheet PDF文件第4页浏览型号IRFI550ATU的Datasheet PDF文件第5页浏览型号IRFI550ATU的Datasheet PDF文件第6页浏览型号IRFI550ATU的Datasheet PDF文件第7页 
IRFW/I550A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.04  
ID = 40 A  
Improved Gate Charge  
Extended Safe Operating Area  
D2-PAK  
I2-PAK  
O
175 C Operating Temperature  
2
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
Lower RDS(ON) : 0.032 (Typ.)  
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
100  
40  
Units  
VDSS  
V
O
Continuous Drain Current (TC=25 C)  
ID  
A
O
Continuous Drain Current (TC=100 C)  
28.3  
160  
1
IDM  
VGS  
EAS  
IAR  
Drain Current-Pulsed  
A
V
O
+
_
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
20  
2
640  
40  
mJ  
A
O
1
O
EAR  
dv/dt  
1
Repetitive Avalanche Energy  
16.7  
6.5  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
O
*
Total Power Dissipation (TA=25  
)
)
C
C
3.8  
O
PD  
Total Power Dissipation (T =25  
167  
1.11  
W
C
O
Linear Derating Factor  
W/ C  
Operating Junction and  
Storage Temperature Range  
TJ , TSTG  
- 55 to +175  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
Rq  
Junction-to-Case  
--  
--  
--  
0.9  
40  
JC  
O
Rq  
*
Junction-to-Ambient  
Junction-to-Ambient  
C /W  
JA  
Rq  
62.5  
JA  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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