IRFI540N

更新时间： 2024-11-17 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	133K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)

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中文翻译

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数据手册
替代型号

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IRFI540N 数据手册

PD - 9.1361A

PRELIMINARY

IRFI540N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 100V

R_DS(on)= 0.052Ω

I_D= 20A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowestpossibleon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.36

±20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

300

E_AR

dv/dt

T_J

Repetitive Avalanche Current

Peak Diode Recovery dv/dt

Operating Junction and

5.4

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

Max.

2.8

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

3/16/98

12 3 4 5 6 7 8

中文翻译

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IRFI540N 替代型号

型号	品牌	替代类型	描述	数据表
IRFI540NPBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRFI540N相关器件

型号	品牌	获取价格	描述	数据表
IRFI540N-002	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-003	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-004	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-005	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-006	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-009	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFI540N-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me

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