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IRFI510G-006 PDF预览

IRFI510G-006

更新时间: 2024-10-29 10:38:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI510G-006 数据手册

  

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