IRFF320PBF

更新时间： 2024-01-23 12:19:50

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	136K
描述
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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IRFF320PBF 数据手册

PD-90428C

IRFF320

JANTX2N6792

JANTXV2N6792

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/555

400V, N-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRFF320 400V 1.8Ω

2.0A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

TO-39

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

2.0

1.25

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.16

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

0.19

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

dv/dt

4.0

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

01/22/01

12 3 4 5 6 7

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