Datasheet > IRFF320

IRFF320

更新时间： 2024-01-27 16:27:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	328K
描述
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFF320 数据手册

IRFF320

Data Sheet

March 1999

File Number 1890.4

2.5A, 400V, 1.800 Ohm, N-Channel

Power MOSFET

Features

• 2.5A, 400V

• r = 1.800Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17404.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFF320

TO-205AF

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-205AF

SOURCE

DRAIN

(CASE)

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

下载PDF

IRFF320 替代型号

型号	品牌	替代类型	描述	数据表
IRFF320	INFINEON	功能相似	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

与IRFF320相关器件

型号	品牌	获取价格	描述	数据表
IRFF320PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal
IRFF320R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 2.5A I(D) \| TO-205AF
IRFF321	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 2.5A I(D) \| TO-205AF
IRFF321R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 2.5A I(D) \| TO-205AF
IRFF322	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFF322R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 2A I(D) \| TO-205AF
IRFF323	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFF323R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 2A I(D) \| TO-205AF
IRFF330	SEME-LAB	获取价格	N-Channel MOSFET in a Hermetically sealed TO39
IRFF330	INTERSIL	获取价格	3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET