是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 1.15 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 15 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF313R | FAIRCHILD |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,1.15A I(D),TO-205AF | |
IRFF320 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS | |
IRFF320 | INTERSIL |
获取价格 |
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET | |
IRFF320PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFF320R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF | |
IRFF321 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF | |
IRFF321R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF | |
IRFF322 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRFF322R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF | |
IRFF323 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |