生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 1.15 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF312R | FAIRCHILD |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.15A I(D),TO-205AF |
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IRFF313 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Meta |
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IRFF313 | ROCHESTER |
获取价格 |
1.15A, 350V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF313 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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IRFF313R | FAIRCHILD |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,1.15A I(D),TO-205AF |
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IRFF320 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
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IRFF320 | INTERSIL |
获取价格 |
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
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IRFF320PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal |
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IRFF320R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF |
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IRFF321 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF |
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