IRFF310

更新时间： 2024-11-17 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管局域网
页数	文件大小	规格书
7页	132K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)

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替代型号

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IRFF310 数据手册

PD - 90425C

IRFF310

JANTX2N6786

JANTXV2N6786

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/556

400V, N-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRFF310 400V 3.6Ω

1.25A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

TO-39

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

1.25

0.80

5.5

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.12

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

0.82

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

dv/dt

4.0

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

01/22/01

12 3 4 5 6 7

中文翻译

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IRFF310 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N6786	MICROSEMI	功能相似	Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
IRFF310	INTERSIL	功能相似	1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

与IRFF310相关器件

型号	品牌	获取价格	描述	数据表
IRFF310R	FAIRCHILD	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF
IRFF310SCC5205/014PBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFF311	VISHAY	获取价格	Power Field-Effect Transistor, 1.35A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
IRFF311	FAIRCHILD	获取价格	1.35A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF311R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 1.35A I(D) \| TO-205AF
IRFF312	VISHAY	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312	INFINEON	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312R	FAIRCHILD	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.15A I(D),TO-205AF
IRFF313	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Meta

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