Datasheet > IRFF310

IRFF310

更新时间： 2024-11-17 22:51:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	328K
描述
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

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IRFF310 数据手册

IRFF310

Data Sheet

March 1999

File Number 1888.3

1.35A, 400V, 3.600 Ohm, N-Channel

Power MOSFET

Features

• 1.35A, 400V

• r = 3.600Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

Formerly developmental type TA17444.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFF310

TO-205AF

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-205AF

SOURCE

DRAIN

(CASE)

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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IRFF310 替代型号

型号	品牌	替代类型	描述	数据表
IRFF310	INFINEON	功能相似	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖T

与IRFF310相关器件

型号	品牌	获取价格	描述	数据表
IRFF310R	FAIRCHILD	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF
IRFF310SCC5205/014PBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFF311	VISHAY	获取价格	Power Field-Effect Transistor, 1.35A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
IRFF311	FAIRCHILD	获取价格	1.35A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF311R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 1.35A I(D) \| TO-205AF
IRFF312	VISHAY	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312	INFINEON	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta
IRFF312R	FAIRCHILD	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.15A I(D),TO-205AF
IRFF313	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Meta