是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.11 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 1.25 A |
最大漏源导通电阻: | 3.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF310R | FAIRCHILD |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF |
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IRFF310SCC5205/014PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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IRFF311 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 1.35A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Me |
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IRFF311 | FAIRCHILD |
获取价格 |
1.35A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF311R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 1.35A I(D) | TO-205AF |
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IRFF312 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta |
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IRFF312 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta |
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IRFF312 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Meta |
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IRFF312R | FAIRCHILD |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.15A I(D),TO-205AF |
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IRFF313 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Meta |
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