Datasheet > IRF9310PBF-1

IRF9310PBF-1

更新时间： 2024-11-20 20:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	232K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

数据手册

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IRF9310PBF-1 数据手册

IRF9310PbF-1

HEXFET^®Power MOSFET

V_DS

-30

4.6

R_{DS(on) max}

(@V_GS= -10V)

R_{DS(on) max}

(@V_GS= -4.5V)

Q_{g (typical)}

I_D

6.8

-20

SO-8

(@T_A= 25°C)

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF9310PbF-1

IRF9310TRPbF-1

IRF9310PbF-1

SO-8

Tape and Reel

Absolute Maximum Ratings

Max.

-30

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Units

V_DS

± 20

-20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

-16

@ T_A= 70°C

-160

2.5

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Power Dissipation

0.02

Linear Derating Factor

W/°C

-55 to + 150

Operating Junction and

°C

Storage Temperature Range

STG

Notes through ꢀ are on page 2

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June 30, 2014

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