Datasheet > IRF9150

IRF9150

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管脉冲局域网
页数	文件大小	规格书
7页	61K
描述
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

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IRF9150 数据手册

IRF9150

Data Sheet

February 1999

File Number 2280.3

-25A, -100V, 0.150 Ohm, P-Channel Power

MOSFET

Features

• -25A, -100V

• r = 0.150Ω

This P-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Formerly developmental type TA49230.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9150

TO-204AE

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

5-20

12 3 4 5 6 7

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