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IRF840AL PDF预览

IRF840AL

更新时间: 2024-11-28 22:38:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 131K
描述
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840AL 数据手册

 浏览型号IRF840AL的Datasheet PDF文件第2页浏览型号IRF840AL的Datasheet PDF文件第3页浏览型号IRF840AL的Datasheet PDF文件第4页浏览型号IRF840AL的Datasheet PDF文件第5页浏览型号IRF840AL的Datasheet PDF文件第6页浏览型号IRF840AL的Datasheet PDF文件第7页 
PD- 91901B  
IRF840AS  
IRF840AL  
HEXFET® Power MOSFET  
SMPS MOSFET  
Applications  
VDSS  
500V  
RDS(on) max  
ID  
8.0A  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
0.85Ω  
Benefits  
l Low Gate Charge Qg Results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Effective Coss Specified (See AN 1001)  
D2Pak  
IRF840AS  
TO-262  
IRF840AL  
Absolute Maximum Ratings  
Parameter  
Max.  
8.0  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V†  
Continuous Drain Current, VGS @ 10V†  
Pulsed Drain Current †  
Power Dissipation  
5.1  
32  
PD @TC = 25°C  
PD @TA = 25°C  
125  
W
Power Dissipation  
3.1  
Linear Derating Factor  
1.0  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ†  
Operating Junction and  
5.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Typical SMPS Topologies  
l Two Transistor Forward  
l Haft Bridge  
l Full Bridge  
Notes  through †are on page 10  
www.irf.com  
1
12/16/99  

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