Datasheet > IRF830

IRF830

更新时间： 2024-11-26 05:39:27

品牌	Logo	应用领域
SUNTAC		晶体晶体管局域网
页数	文件大小	规格书
4页	212K
描述
POWER MOSFET

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IRF830 数据手册

IRF830

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, conveters, solenoid and relay drivers.

'ꢀ Higher Current Rating

'ꢀ Lower r_DS(ON), Lower Capacitances

'ꢀ Lower Total Gate Charge

'ꢀ Tighter VSD Specifications

'ꢀ Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

.................IRF830....................................................TO-220

.................IRF830FP

TO-220FP

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

Symbol

I_D

Value

Unit

5.0

ꢀ Pulsed (Note 1)

I_DM

Gate-to-Source Voltage ꢀ Continue

Total Power Dissipation

V_GS

P_D

Derate above 25R

0.77

125

W/R

Single Pulse Avalanche Energy (Note 2)

Operating and Storage Temperature Range

Thermal Resistance ꢀ Junction to Case

ꢀ Junction to Ambient

E_AS

T_J, T_STG

-55 to 150

1.70

R/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

300

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