Datasheet > IRF830

IRF830

更新时间： 2024-11-26 05:39:27

品牌	Logo	应用领域
新硅能 - SILIKRON		晶体开关晶体管局域网
页数	文件大小	规格书
6页	448K
描述
High current, high speed switching

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数据手册

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IRF830 数据手册

IRF830

Features

■

Extremely high dv/dt capability

VDSS = 500V

ID = 5A

Low Gate Charge Qg results in

Simple Drive Requirement

■ 100% avalanche tested

■ Gate charge minimized

RDS(ON) = 1.2Ω

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Description

The IRF830 is a new generation of high voltage

N–Channel enhancement mode power MOSFETs and

is obtained through an extreme optimization layout design,

in additional to pushing on-resistance significantly down,

special care is taken to ensure a very good dv/dt capability,

provide superior switching performance, withstand high

energy pulse in the avalanche, and increases packing density.

IRF830 TOP View (TO220)

Application

■

High current, high speed switching

Lighting

Ideal for off-line power supply, adaptor, PFC

Absolute Maximum Ratings

Parameter

Max.

Units

ID@Tc=25 ْC Continuous Drain Current,VGS@10V

ID@Tc=100ْC Continuous Drain Current,VGS@10V

IDM

Pulsed Drain Current ①

PD@TC=25ْC Power Dissipation

W/ Cْ

Linear Derating Factor

0.67

±30

120

VGS

EAS

IAR

Gate-to-Source Voltage

Single Pulse Avalanche Energy ②

Avalanche Current ①

EAR

dv/dt

Repetitive Avalanche Energy ①

Peak Diode Recovery dv/dt ③

Operating Junction and

8.5

4.5

V/ns

–55 to +150

Cْ

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Junction-to-case

Min.

—

Typ.

—

Max.

Units

RθJC

RθCS

RθJA

1.56

—

Case-to-Sink,Flat,Greased Surface

Junction-to-Ambient

—

0.50

—

Cْ /W

—

62.5

12 3 4 5 6

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